Band-edge absorption characteristics of semi-insulating indium phosphide under unified Franz-Keldysh and Einstein models
نویسندگان
چکیده
The foundational Franz-Keldysh effect and Einstein model are applied in this work to characterize semiconductor band-edge absorption---and its departures from ideality. We unify the models fully field-induced tunneling of photoexcited electrons degenerate valence bands into conduction band, with encroachment band gap arising as an Urbach tail. Our unified is implemented for semi-insulating indium phosphide (SI-InP) strong agreement seen between theoretical experimental results varied photon energies electric fields.
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ژورنال
عنوان ژورنال: Physical review
سال: 2022
ISSN: ['0556-2813', '1538-4497', '1089-490X']
DOI: https://doi.org/10.1103/physrevb.105.155203